Semiconductor device and methods of forming the same

ABSTRACT

An embodiment includes a device including a first semiconductor fin extending from a substrate, a second semiconductor fin extending from the substrate, a hybrid fin over the substrate, the hybrid fin disposed between the first semiconductor fin and the second semiconductor fin, and the hybrid fin having an oxide inner portion extending downward from a top surface of the hybrid fin. The device also includes a first isolation region between the second semiconductor fin, the first semiconductor fin, and the hybrid fin, the hybrid fin extending above a top surface of the first isolation region, a high-k gate dielectric over sidewalls of the hybrid fin, sidewalls of the first semiconductor fin, and sidewalls of the second semiconductor fin, a gate electrode on the high-k gate dielectric, and source/drain regions on the first semiconductor fin on opposing sides of the gate electrode.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefit of U.S. Provisional Application No.63/268,871 filed on Mar. 4, 2022, application is hereby incorporatedherein by reference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as, for example, personal computers, cell phones, digital cameras,and other electronic equipment. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductor layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. However, asthe minimum features sizes are reduced, additional problems arise thatshould be addressed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates an example of Fin Field-Effect Transistors (FinFETs),in accordance with some embodiments.

FIGS. 2-19 are views of intermediate stages in the manufacturing ofFinFETs, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

According to various embodiments, hybrid fins are formed adjacent andbetween semiconductor fins. The hybrid fins include seams that arefilled by a silicon precursor soaking process and an oxidation process.These processes simultaneously form the interfacial layer(s) under thereplacement gate structures such that extra processing is not needed tofill the seams of the hybrid fins. Filling the seams of the hybrid finsprevents conductive material from subsequently formed source/drainand/or gate contacts to form in the seams. Preventing the conductivematerial from source/drain and/or gate contacts to form in the seamsprevents the source/drains and gates from shorting to each other throughthe seams. Manufacturing yield of the devices may thus be improved.

FIG. 1 illustrates an example of Fin Field-Effect Transistors (FinFETs),in accordance with some embodiments. FIG. 1 is a three-dimensional view,where some features of the FinFETs are omitted for illustration clarity.The FinFETs include semiconductor fins 54 extending from a substrate 50(e.g., a semiconductor substrate), with the semiconductor fins 54 actingas channel regions 58 for the FinFETs. Isolation regions 68, such asshallow trench isolation (STI) regions, are disposed between adjacentsemiconductor fins 54, which may protrude above and from betweenadjacent isolation regions 68. Although the isolation regions 68 aredescribed/illustrated as being separate from the substrate 50, as usedherein, the term “substrate” may refer to the semiconductor substratealone or a combination of the semiconductor substrate and the isolationregions. Additionally, although the bottom portions of the semiconductorfins 54 are illustrated as being single, continuous materials with thesubstrate 50, the bottom portions of the semiconductor fins 54 and/orthe substrate 50 may include a single material or a plurality ofmaterials. In this context, the semiconductor fins 54 refer to theportion extending from between the adjacent isolation regions 68.

Gate dielectrics 112 are along sidewalls and over top surfaces of thesemiconductor fins 54. Gate electrodes 114 are over the gate dielectrics112. Epitaxial source/drain regions 98 are disposed in opposite sides ofthe semiconductor fins 54 with respect to the gate dielectrics 112 andgate electrodes 114. The epitaxial source/drain regions 98 may be sharedbetween various semiconductor fins 54. For example, adjacent epitaxialsource/drain regions 98 may be electrically connected, such as throughcoalescing the epitaxial source/drain regions 98 by epitaxial growth, orthrough coupling the epitaxial source/drain regions 98 with a samesource/drain contact.

FIG. 1 further illustrates reference cross-sections that are used inlater figures. Cross-section A-A′ is along a longitudinal axis of a gateelectrode 114. Cross-section B-B′ is perpendicular to cross-section A-A′and is along a longitudinal axis of a semiconductor fin 54 and in adirection of, for example, a current flow between the epitaxialsource/drain regions 98 of a FinFET. Cross-section C-C′ is parallel tocross-section A-A′ and extends through epitaxial source/drain regions 98of the FinFETs. Subsequent figures refer to these referencecross-sections for clarity.

Some embodiments discussed herein are discussed in the context ofFinFETs formed using a gate-last process. In other embodiments, agate-first process may be used. Also, some embodiments contemplateaspects used in planar devices, such as planar FETs.

FIGS. 2-19 are views of intermediate stages in the manufacturing ofFinFETs, in accordance with some embodiments. FIGS. 2, 3, 4, 5, 6, 7, 8,9A, 10A, 11A, 12A, 13A, 14A, 15A, 16A, 17A, 18A, and 19 arecross-sectional views illustrated along a similar cross-section asreference cross-section A-A′ in FIG. 1 . FIGS. 9B, 10B, 11B, 12B, 13B,14B, 15B, 16B, 17B, and 18B are cross-sectional views illustrated alonga similar cross-section as reference cross-section B-B′ in FIG. 1 .FIGS. 9C, 10C, 11C, 12C, 13C, 14C, 15C, 16C, 17C, and 18C arecross-sectional views illustrated along a similar cross-section asreference cross-section C-C′ in FIG. 1 .

In FIG. 2 , a substrate 50 is provided. The substrate 50 may be asemiconductor substrate, such as a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, or the like, which may bedoped (e.g., with a p-type or an n-type impurity) or undoped. Thesubstrate 50 may be a wafer, such as a silicon wafer. Generally, an SOIsubstrate is a layer of a semiconductor material formed on an insulatorlayer. The insulator layer may be, for example, a buried oxide (BOX)layer, a silicon oxide layer, or the like. The insulator layer isprovided on a substrate, typically a silicon or glass substrate. Othersubstrates, such as a multi-layered or gradient substrate may also beused. In some embodiments, the semiconductor material of the substrate50 may include silicon; germanium; a compound semiconductor includingsilicon carbide, gallium arsenide, gallium phosphide, indium phosphide,indium arsenide, and/or indium antimonide; an alloy semiconductorincluding silicon germanium, gallium arsenide phosphide, aluminum indiumarsenide, aluminum gallium arsenide, gallium indium arsenide, galliumindium phosphide, and/or gallium indium arsenide phosphide; combinationsthereof; or the like.

The substrate 50 has an n-type region 50N and a p-type region 50P. Then-type region 50N can be for forming n-type devices, such as NMOStransistors, e.g., n-type FinFETs, and the p-type region 50P can be forforming p-type devices, such as PMOS transistors, e.g., p-type FinFETs.The n-type region 50N may be physically separated (not separatelyillustrated) from the p-type region 50P, and any number of devicefeatures (e.g., other active devices, doped regions, isolationstructures, etc.) may be disposed between the n-type region 50N and thep-type region 50P. Although one n-type region 50N and one p-type region50P are illustrated, any number of n-type regions 50N and p-type regions50P may be provided.

In FIG. 3 , fin structures 52 are formed in the substrate 50. The finstructures 52 include semiconductor fins 54, which are semiconductorstrips. The fin structures 52 may be formed in the substrate 50 byetching trenches 56 in the substrate 50. The etching may be anyacceptable etching process, such as a reactive ion etch (RIE), neutralbeam etch (NBE), the like, or a combination thereof. The etching processmay be anisotropic.

The fin structures 52 may be patterned by any suitable method. Forexample, the fin structures 52 may be patterned using one or morephotolithography processes, including double-patterning ormulti-patterning processes. Generally, double-patterning ormulti-patterning processes combine photolithography and self-alignedprocesses, allowing patterns to be created that have, for example,pitches smaller than what is otherwise obtainable using a single, directphotolithography process. For example, in one embodiment, a sacrificiallayer is formed over a substrate and patterned using a photolithographyprocess. Spacers are formed alongside the patterned sacrificial layerusing a self-aligned process. The sacrificial layer is then removed, andthe remaining spacers may then be used as masks 60 to pattern the finstructures 52. In some embodiments, the masks 60 (or other layer) mayremain on the fin structures 52.

In the illustrated embodiment, the fin structures 52 each have twosemiconductor fins 54. However, the fin structures 52 may each have anyquantity of the semiconductor fins 54, such as one, two, three, or moresemiconductor fins 54. Further, different fin structures 52 may havedifferent quantities of semiconductor fins 54. For example, finstructures 52 in a first region of a die (e.g., a core logic region) mayhave a first quantity of semiconductor fins 54, and fin structures 52 ina second region of the die (e.g., an input/output region) may have asecond quantity of semiconductor fins 54, with the second quantity beingdifferent from the first quantity.

The trenches 56 may have different widths. In some embodiments, a firstsubset of the trenches 56A have a smaller width than a second subset ofthe trenches 56B. The trenches 56A separate the semiconductor fins 54 ofrespective fin structures 52, and the trenches 56B separate the finstructures 52 from each other. The semiconductor fins 54 of respectivefin structures 52 are spaced apart by a lesser distance than the finstructures 52 are spaced apart from each other. In some embodiments, thesemiconductor fins 54 of respective fin structures 52 are spaced apartby a distance D₁ in the range of 5 nm to 100 nm, the fin structures 52are spaced apart from each other by a distance D₂ in the range of 20 nmto 200 nm, and the distance D₂ is greater than the distance D₁. Thetrenches 56 may be formed with different widths by patterning the masks60 with a pattern having features spaced apart by different distancesthat correspond to the different widths of the trenches 56. The widthsof the trenches 56 defines the width of the semiconductor fins 54 (alsoreferred to as the critical dimension of the semiconductor fins 54). Insome embodiments, the semiconductor fins 54 have a critical dimension inthe range of 5 nm to 30 nm.

In some embodiments, the trenches 56 have different depths. For example,the trenches 56A may have a smaller depth than the trenches 56B. Thetrenches 56 may be formed with different depths as a result of patternloading effects during etching of the trenches 56, with the patternloading effects caused by the pattern of the masks 60 having featuresspaced apart by different distances. The depths of the trenches 56defines the height of the semiconductor fins 54. In some embodiments,the semiconductor fins 54 have a height in the range of 10 nm to 100 nm.

In FIG. 4 , one or more layer(s) of insulation material 62 for isolationregions are formed over the substrate 50 and between adjacentsemiconductor fins 54. The insulation material 62 may include an oxide,such as silicon oxide, a nitride, such as silicon nitride, the like, ora combination thereof, and may be formed by chemical vapor deposition(CVD), a high-density plasma chemical vapor deposition (HDP-CVD), aflowable CVD (FCVD), atomic layer deposition (ALD), the like, or acombination thereof. Other insulation materials formed by any acceptableprocess may be used. In the illustrated embodiment, the insulationmaterial 62 includes a liner 62A on surfaces of the substrate 50 and thesemiconductor fins 54, and a fill material 62B on the liner 62A. Theliner 62A may be amorphous silicon, silicon oxide, silicon nitride, orthe like conformally deposited with a conformal deposition process suchas ALD, and the fill material 62B may be silicon oxide grown with aconformal growth process such as FCVD. In another embodiment, a singlelayer of insulation material 62 is formed. An anneal process may beperformed once the insulation material is formed. The anneal process maybe performed in an environment containing H₂ or O₂. The liner 62A can beoxidized by the anneal process so that after annealing, the liner 62A isa similar material as the fill material 62B. In an embodiment, theinsulation material 62 is formed such that excess insulation material 62covers the semiconductor fins 54.

The thickness of the insulation material 62 is controlled so that theinsulation material 62 does not fill all of the trenches 56. In someembodiments, the insulation material 62 is deposited to a thickness T₁in the range of 5 nm to 30 nm. The distances D₁, D₂ (see FIG. 3 ) andthe thickness T₁ are controlled so that the insulation material 62 fillsthe trenches 56A without filling the trenches 56B. For example, thedispensed volume of the insulation material 62 may be sufficient tocompletely fill (or overfill) the trenches 56A, but may be insufficientto completely fill the trenches 56B. The insulation material 62 in thetrenches 56B thus does not completely fill the trenches 56B, but insteadconformally lines the surfaces of the substrate 50 and the sidewalls ofthe semiconductor fins 54 that define the trenches 56B.

In the illustrated embodiment, the sidewalls of the semiconductor fins54 and the insulation material 62 are illustrated as forming rightangles with the top surfaces of the substrate 50 and the insulationmaterial 62, respectively. In other embodiments contouring may occurduring the patterning of the semiconductor fins 54 and the deposition ofthe insulation material 62. Accordingly, rounded surfaces may connectthe sidewalls of the semiconductor fins 54 to the top surfaces of thesubstrate 50, and rounded surfaces may connect the sidewalls of theinsulation material 62 to the top surfaces of the insulation material62.

In FIG. 5 , one or more dielectric layer(s) 64 are formed on theinsulation material 62. The dielectric layer(s) 64 fill (and mayoverfill) the remaining portions of the trenches 56B that are not filled(e.g., are unoccupied) by the insulation material 62. In someembodiments, the dielectric layer(s) 64 merge in the trenches 56B andform seams or voids 64A in the trenches 56B. The seams 64A may have awidth Wi in a range from 1 to 3 nm. The dielectric layer(s) 64 may beformed of one or more dielectric material(s). Acceptable dielectricmaterials include nitrides (e.g., silicon nitride), oxides (e.g.,tantalum oxide, aluminum oxide, zirconium oxide, hafnium oxide, etc.),carbides (e.g., silicon carbonitride, silicon oxycarbonitride, etc.),combinations thereof, or the like, which may be deposited by ALD, CVD,or the like. Other insulation materials formed by any acceptable processmay be used. Further, the dielectric layer(s) 64 may be formed of alow-k dielectric material (e.g., a dielectric material having a k-valueless than about 3.5), a high-k dielectric material (e.g., a dielectricmaterial having a k-value greater than about 7.0), or multi-layersthereof. The dielectric layer(s) 64 are formed of material(s) that havea high etching selectivity from the etching of the insulation material62. In some embodiments, the dielectric layer(s) 64 include siliconnitride formed by ALD.

In FIG. 6 , a removal process is applied to the dielectric layer(s) 64and the insulation material 62 to remove excess portions of thedielectric layer(s) 64 and the insulation material 62 over thesemiconductor fins 54 (e.g., outside of the trenches 56), therebyforming hybrid fins 66 including seams or voids 66A on the insulationmaterial 62. In some embodiments, a planarization process such as achemical mechanical polish (CMP), an etch-back process, combinationsthereof, or the like may be utilized. The dielectric layer(s) 64, afterthe removal process, have portions left in the trenches 56B (thusforming the hybrid fins 66). After the planarization process, the topsurfaces of the hybrid fins 66, the insulation material 62, and thesemiconductor fins 54 are coplanar (within process variations) such thatthey are level with each other. The hybrid fins 66 are disposed betweenand are adjacent to the fin structures 52. In some embodiments, afterthe planarization process, the seams 66A of the hybrid fins 66 have adepth D₄ in the range of 60 nm to 70 nm. The hybrid fins 66 may also bereferred to as “dielectric fins.”

In FIG. 7 , the insulation material 62 is recessed to form STI regions68. The insulation material 62 is recessed such that upper portions ofthe semiconductor fins 54 and the hybrid fins 66 protrude above and frombetween neighboring STI regions 68. Further, the top surfaces of the STIregions 68 may have a flat surface as illustrated, a convex surface, aconcave surface (such as dishing), or a combination thereof. The topsurfaces of the STI regions 68 may be formed flat, convex, and/orconcave by an appropriate etch. The STI regions 68 may be recessed usingan acceptable etching process, such as one that is selective to thematerial(s) of the insulation material 62. As will be subsequentlydescribed in greater detail, the etching process selectively etches thematerial(s) of the insulation material 62 at a faster rate than thematerials of the semiconductor fins 54 and the hybrid fins 66. Thesemiconductor fins 54 and the hybrid fins 66 may thus be protected fromdamage during formation of the STI regions 68. Timed etch processes maybe used to stop the etching of the insulation material 62 after the STIregions 68 reach a desired height. In some embodiments, the STI regions68 have a height in the range of 10 nm to 100 nm. The STI regions 68include the remaining portions of the insulation material 62 in thetrenches 56.

As previously noted, the trenches 56B are deeper than the trenches 56A.As a result, the STI regions 68 have different heights. Specifically, afirst subset of the STI regions 68A have a lesser height than a secondsubset of the STI regions 68B. The STI regions 68A are in the trenches56A and between and among the semiconductor fins 54 of respective finstructures 52, and may be referred to as “inner STI regions.” The STIregions 68B are in the trenches 56B and between adjacent fin structures52 and around the hybrid fins 66 (e.g., between the semiconductor fins54 and the hybrid fins 66), and may be referred to as “outer STIregions.” Because the trenches 56B are deeper than the trenches 56A, thebottom surfaces of the STI regions 68B are disposed further from the topsurfaces of the semiconductor fins 54 and the hybrid fins 66 than thebottom surfaces of the STI regions 68A. In some embodiments, the bottomsurfaces of the STI regions 68B are disposed further from the topsurfaces of the semiconductor fins 54 and the hybrid fins 66 than thebottom surfaces of the STI regions 68A by the distance D₃ (previouslydescribed).

Forming the STI regions 68 reforms portions of the trenches 56A, 56B.The reformed portions of the trenches 56A are between respective pairsof the semiconductor fins 54, and the reformed portions of the trenches56B are between respective pairs of a semiconductor fin 54 and a hybridfin 66. The distances D₁, D₂ (see FIG. 3 ) and the thickness T₁ (seeFIG. 4 ) are controlled so that the reformed portions of the trenches56A are wider than the reformed portions of the trenches 56B. In someembodiments, the reformed portions of the trenches 56A have a width W₁in the range of 10 nm to 30 nm, the reformed portions of the trenches56B have a width W₂ in the range of 5 nm to 20 nm, and the width W₁ isgreater than the width W₂.

The insulation material 62 may be recessed by different amounts as aresult of pattern loading effects during recessing of the insulationmaterial 62, with the pattern loading effects caused by the reformedportions of the trenches 56A, 56B having different widths. In someembodiments, the etching of the insulation material 62 is performed withetching parameters (e.g., temperature, pressure, and duration) thatexacerbate the pattern loading effects. As a result of the patternloading effects, the portions of the insulation material 62 in thetrenches 56A are recessed more (e.g., by a greater depth) than theportions of the insulation material 62 in the trenches 56B. Thus, thetop surfaces of the STI regions 68B are disposed further from thesubstrate 50 than the top surfaces of the STI regions 68A. In otherwords, the STI regions 68B extend above the STI regions 68A, withrespect to the substrate 50. In some embodiments, the top surfaces ofthe STI regions 68B are disposed further from the substrate 50 than thetop surfaces of the STI regions 68A by a distance Ds in the range of 2nm to 10 nm.

In some embodiments where the insulation material 62 includes siliconoxide, the insulation material 62 is recessed by a dry etch usinghydrofluoric (HF) acid and ammonia (NH₃). Each STI region 68B extendsalong three sides (e.g., the sidewalls and the bottom surface) of ahybrid fin 66. Specifically, a first portion of an STI region 68B isbetween a hybrid fin 66 and a first fin structure 52, a second portionof the STI region 68B is between the hybrid fin 66 and a second finstructure 52, and a third portion of the STI region 68B is beneath thehybrid fin 66.

The process described for FIGS. 2-7 is just one example of how thesemiconductor fins 54, the hybrid fins 66, and the STI regions 68 may beformed. In some embodiments, the semiconductor fins 54 and/or the hybridfins 66 may be formed using a mask and an epitaxial growth process. Forexample, a dielectric layer can be formed over a top surface of thesubstrate 50, and trenches can be etched through the dielectric layer toexpose the underlying substrate 50. Epitaxial structures can beepitaxially grown in some of the trenches, insulating structures can bedeposited in others of the trenches, and the dielectric layer can berecessed (in a similar manner as described for FIG. 7 ) such that theepitaxial structures protrude from the dielectric layer to form thesemiconductor fins 54 and the insulating structures protrude from thedielectric layer to form the hybrid fins 66. In some embodiments whereepitaxial structures are epitaxially grown, the epitaxially grownmaterials may be in situ doped during growth, which may obviate priorand/or subsequent implantations, although in situ and implantationdoping may be used together.

Further, it may be advantageous to epitaxially grow a material in n-typeregion 50N different from the material in p-type region 50P. In variousembodiments, upper portions of the semiconductor fins 54 may be formedof silicon-germanium (Si_(x)Ge_(1−x), where x can be in the range of 0to 1), silicon carbide, pure or substantially pure germanium, a III-Vcompound semiconductor, a II-VI compound semiconductor, or the like. Forexample, the available materials for forming III-V compoundsemiconductor include, but are not limited to, indium arsenide, aluminumarsenide, gallium arsenide, indium phosphide, gallium nitride, indiumgallium arsenide, indium aluminum arsenide, gallium antimonide, aluminumantimonide, aluminum phosphide, gallium phosphide, and the like.

Further, appropriate wells (not separately illustrated) may be formed inthe semiconductor fins 54 and/or the substrate 50. The wells may have aconductivity type opposite from a conductivity type of source/drainregions that will be subsequently formed in each of the n-type region50N and the p-type region 50P. In some embodiments, a p-type well isformed in the n-type region 50N, and an n-type well is formed in thep-type region 50P. In some embodiments, a p-type well or an n-type wellis formed in both the n-type region 50N and the p-type region 50P.

In embodiments with different well types, different implant steps forthe n-type region 50N and the p-type region 50P may be achieved using amask (not separately illustrated) such as a photoresist. For example, aphotoresist may be formed over the semiconductor fins 54, the hybridfins 66, and the STI regions 68 in the n-type region 50N. Thephotoresist is patterned to expose the p-type region 50P. Thephotoresist can be formed by using a spin-on technique and can bepatterned using acceptable photolithography techniques. Once thephotoresist is patterned, an n-type impurity implant is performed in thep-type region 50P, and the photoresist may act as a mask tosubstantially prevent n-type impurities from being implanted into then-type region 50N. The n-type impurities may be phosphorus, arsenic,antimony, or the like implanted in the region to a concentration in therange of 10¹³ cm⁻³ to 10¹⁴ cm⁻³. After the implant, the photoresist isremoved, such as by any acceptable ashing process.

Following or prior to the implanting of the p-type region 50P, a mask(not separately illustrated) such as a photoresist is formed over thesemiconductor fins 54, the hybrid fins 66, and the STI regions 68 in thep-type region 50P. The photoresist is patterned to expose the n-typeregion 50N. The photoresist can be formed by using a spin-on techniqueand can be patterned using acceptable photolithography techniques. Oncethe photoresist is patterned, a p-type impurity implant may be performedin the n-type region 50N, and the photoresist may act as a mask tosubstantially prevent p-type impurities from being implanted into thep-type region 50P. The p-type impurities may be boron, boron fluoride,indium, or the like implanted in the region to a concentration in therange of 10¹³ cm⁻³ to 10¹⁴ cm⁻³. After the implant, the photoresist isremoved, such as by any acceptable ashing process.

After the implants of the n-type region 50N and the p-type region 50P,an anneal may be performed to repair implant damage and to activate thep-type and/or n-type impurities that were implanted. In some embodimentswhere epitaxial structures are epitaxially grown for the semiconductorfins 54, the grown materials may be in situ doped during growth, whichmay obviate the implantations, although in situ and implantation dopingmay be used together.

In FIG. 8 , a dummy dielectric layer 72 is formed on the semiconductorfins 54 k, the hybrid fins 66, and within the seams 66A of the hybridfins 66. The dummy dielectric layer 72 may be formed of a dielectricmaterial such as silicon oxide, silicon nitride, a combination thereof,or the like, which may be deposited or thermally grown according toacceptable techniques such as ALD, in-situ steam growth (ISSG), rapidthermal oxidation (RTO), or the like. The dummy dielectric layer 72 mayfill or substantially fill the seams 66A of the hybrid fins 66. Thedummy dielectric layer 72 may also include or be referred to as aninterfacial layer or interfacial oxide layer. In some embodiments, thedummy dielectric layer 72 has a thickness in the range of 1 nm to 10 nm.A dummy gate layer 74 is formed over the dummy dielectric layer 72, anda mask layer 76 is formed over the dummy gate layer 74. The dummy gatelayer 74 may be deposited over the dummy dielectric layer 72 and thenplanarized, such as by a CMP. The dummy gate layer 74 may be formed of aconductive or non-conductive material, such as amorphous silicon,polycrystalline-silicon (polysilicon), poly-crystallinesilicon-germanium (poly-SiGe), a metal, a metallic nitride, a metallicsilicide, a metallic oxide, or the like, which may be deposited byphysical vapor deposition (PVD), CVD, or the like. The dummy gate layer74 may be formed of material(s) that have a high etching selectivityfrom the etching of insulation materials, e.g., the STI regions 68and/or the dummy dielectric layer 72. The mask layer 76 may be depositedover the dummy gate layer 74. The mask layer 76 may be formed of adielectric material such as silicon nitride, silicon oxynitride, or thelike. In this example, a single dummy gate layer 74 and a single masklayer 76 are formed across the n-type region 50N and the p-type region50P. In the illustrated embodiment, the dummy dielectric layer 72 coversthe semiconductor fins 54, the hybrid fins 66, and the STI regions 68,such that the dummy dielectric layer 72 extends over the STI regions 68and between the dummy gate layer 74 and the STI regions 68. In anotherembodiment, the dummy dielectric layer 72 covers only the semiconductorfins 54.

FIGS. 9A-18C illustrate various additional steps in the manufacturing ofembodiment devices. FIGS. 9A-18C illustrate features in either of then-type region 50N and the p-type region 50P. For example, the structuresillustrated may be applicable to both the n-type region 50N and thep-type region 50P. Differences (if any) in the structures of the n-typeregion 50N and the p-type region 50P are explained in the descriptionaccompanying each figure.

In FIG. 9A-9C, the mask layer 76 is patterned using acceptablephotolithography and etching techniques to form masks 86. The pattern ofthe masks 86 is then transferred to the dummy gate layer 74 by anyacceptable etching technique to form dummy gates 84. The pattern of themasks 86 may optionally be further transferred to the dummy dielectriclayer 72 by any acceptable etching technique to form dummy dielectrics82. The dummy gates 84 cover respective channel regions 58 of thesemiconductor fins 54. The pattern of the masks 86 may be used tophysically separate adjacent dummy gates 84. The dummy gates 84 may havelengthwise directions substantially perpendicular (within processvariations) to the lengthwise directions of the semiconductor fins 54.The masks 86 may be removed during the patterning of the dummy gate 84,or may be removed during subsequent processing.

Gate spacers 92 are formed over the semiconductor fins 54, on exposedsidewalls of the masks 86 (if present), the dummy gates 84, and thedummy dielectrics 82. The gate spacers 92 may be formed by conformallydepositing one or more dielectric material(s) and subsequently etchingthe dielectric material(s). Acceptable dielectric materials may includesilicon oxide, silicon nitride, silicon oxynitride, siliconoxycarbonitride, or the like, which may be formed by a conformaldeposition process such as chemical vapor deposition (CVD),plasma-enhanced chemical vapor deposition (PECVD), atomic layerdeposition (ALD), plasma-enhanced atomic layer deposition (PEALD), orthe like. Other insulation materials formed by any acceptable processmay be used. Any acceptable etch process, such as a dry etch, a wetetch, the like, or a combination thereof, may be performed to patternthe dielectric material(s). The etching may be anisotropic. Thedielectric material(s), when etched, have portions left on the sidewallsof the dummy gates 84 (thus forming the gate spacers 92). In someembodiments the etch used to form the gate spacers 92 is adjusted sothat the dielectric material(s), when etched, also have portions left onthe sidewalls of the semiconductor fins 54 (thus forming fin spacers94). After etching, the fin spacers 94 (if present) and the gate spacers92 can have straight sidewalls (as illustrated) or can have curvedsidewalls (not separately illustrated).

The fin spacers 94 include inner fin spacers 94N (disposed between thesemiconductor fins 54 of a same fin structure 52, see FIG. 8 ) and outerfin spacers 940 (disposed between the semiconductor fins 54 and thehybrid fins 66). In the illustrated embodiments, the inner fin spacers94N are separated after patterning, such that the STI regions 68A areexposed. In another embodiment, the inner fin spacers 94N are notcompletely separated, such that portions of the dielectric material(s)for the spacers remain over the STI regions 68A. Further, because theSTI regions 68A have a lesser height than the STI regions 68B, the innerfin spacers 94N have a greater height than the outer fin spacers 940.

Further, implants may be performed to form lightly doped source/drain(LDD) regions (not separately illustrated). In the embodiments withdifferent device types, similar to the implants for the wells previouslydescribed, a mask (not separately illustrated) such as a photoresist maybe formed over the n-type region 50N, while exposing the p-type region50P, and appropriate type (e.g., p-type) impurities may be implantedinto the semiconductor fins 54 exposed in the p-type region 50P. Themask may then be removed. Subsequently, a mask (not separatelyillustrated) such as a photoresist may be formed over the p-type region50P while exposing the n-type region 50N, and appropriate typeimpurities (e.g., n-type) may be implanted into the semiconductor fins54 exposed in the n-type region 50N. The mask may then be removed. Then-type impurities may be any of the n-type impurities previouslydescribed, and the p-type impurities may be any of the p-type impuritiespreviously described. During the implanting, the channel regions 58remain covered by the dummy gates 84, so that the channel regions 58remain substantially free of the impurity implanted to form the LDDregions. The LDD regions may have a concentration of impurities in therange of 10¹⁵ cm⁻³to 10¹⁹ cm⁻³. An anneal may be used to repair implantdamage and to activate the implanted impurities.

It is noted that the previous disclosure generally describes a processof forming spacers and LDD regions. Other processes and sequences may beused. For example, fewer or additional spacers may be utilized,different sequence of steps may be utilized, additional spacers may beformed and removed, and/or the like. Furthermore, the n-type devices andthe p-type devices may be formed using different structures and steps.

In FIGS. 10A-10C, source/drain recesses 96 are formed in thesemiconductor fins 54. In the illustrated embodiment, the source/drainrecesses 96 extend into the semiconductor fins 54. The source/drainrecesses 96 may also extend into the substrate 50. In variousembodiments, the source/drain recesses 96 may extend to a top surface ofthe substrate 50 without etching the substrate 50; the semiconductorfins 54 may be etched such that bottom surfaces of the source/drainrecesses 96 are disposed below the top surfaces of the STI regions 68;or the like. The source/drain recesses 96 may be formed by etching thesemiconductor fins 54 using an anisotropic etching process, such as aRIE, a NBE, or the like. The etching process selectively etches thematerial(s) of the semiconductor fins 54 at a faster rate than thematerials of the hybrid fins 66 and the STI regions 68. The gate spacers92 and the dummy gates 84 collectively mask portions of thesemiconductor fins 54 during the etching processes used to form thesource/drain recesses 96. Timed etch processes may be used to stop theetching of the source/drain recesses 96 after the source/drain recesses96 reach a desired depth. The fin spacers 94 (if present) may be etchedduring or after the etching of the source/drain recesses 96, so that theheight of the fin spacers 94 is reduced. The size and dimensions of thesource/drain regions that will be subsequently formed in thesource/drain recesses 96 may be controlled by adjusting the height ofthe fin spacers 94. The hybrid fins 66 are not recessed, and remainbetween the fin structures 52 are the source/drain recesses 96 areetched.

In FIGS. 11A-11C, epitaxial source/drain regions 98 are formed in thesource/drain recesses 96. The epitaxial source/drain regions 98 are thusdisposed in the semiconductor fins 54 such that each dummy gate 84 (andcorresponding channel region 58) is between respective adjacent pairs ofthe epitaxial source/drain regions 98. The epitaxial source/drainregions 98 thus adjoin the channel regions 58. In some embodiments, thegate spacers 92 are used to separate the epitaxial source/drain regions98 from the dummy gates 84 by an appropriate lateral distance so thatthe epitaxial source/drain regions 98 do not short out with subsequentlyformed gates of the resulting FinFETs. A material of the epitaxialsource/drain regions 98 may be selected to exert stress in therespective channel regions 58, thereby improving performance.

The epitaxial source/drain regions 98 in the n-type region 50N may beformed by masking the p-type region 50P. Then, the epitaxialsource/drain regions 98 in the n-type region 50N are epitaxially grownin the source/drain recesses 96 in the n-type region 50N. The epitaxialsource/drain regions 98 may include any acceptable material appropriatefor n-type devices. For example, if the semiconductor fins 54 aresilicon, the epitaxial source/drain regions 98 in the n-type region 50Nmay include materials exerting a tensile strain on the channel regions58, such as silicon, silicon carbide, phosphorous doped silicon carbide,silicon phosphide, or the like. The epitaxial source/drain regions 98 inthe n-type region 50N may be referred to as “n-type source/drainregions.” The epitaxial source/drain regions 98 in the n-type region 50Nmay have surfaces raised from respective surfaces of the semiconductorfins 54 and may have facets.

The epitaxial source/drain regions 98 in the p-type region 50P may beformed by masking the n-type region 50N. Then, the epitaxialsource/drain regions 98 in the p-type region 50P are epitaxially grownin the source/drain recesses 96 in the p-type region 50P. The epitaxialsource/drain regions 98 may include any acceptable material appropriatefor p-type devices. For example, if the semiconductor fins 54 aresilicon, the epitaxial source/drain regions 98 in the p-type region 50Pmay include materials exerting a compressive strain on the channelregions 58, such as silicon germanium, boron doped silicon germanium,germanium, germanium tin, or the like. The epitaxial source/drainregions 98 in the p-type region 50P may be referred to as “p-typesource/drain regions.”

The epitaxial source/drain regions 98 in the p-type region 50P may havesurfaces raised from respective surfaces of the semiconductor fins 54and may have facets.

The epitaxial source/drain regions 98 and/or the semiconductor fins 54may be implanted with impurities to form source/drain regions, similarto the process previously described for forming LDD regions, followed byan anneal. The source/drain regions may have an impurity concentrationin the range of 10¹⁹ cm⁻³ to 10²¹ cm⁻³. The n-type and/or p-typeimpurities for source/drain regions may be any of the impuritiespreviously described. In some embodiments, the epitaxial source/drainregions 98 may be in situ doped during growth.

The epitaxial source/drain regions 98 may include one or moresemiconductor material layers. For example, the epitaxial source/drainregions 98 may each include a liner layer 98A, a main layer 98B, and afinishing layer 98C (or more generally, a first semiconductor materiallayer, a second semiconductor material layer, and a third semiconductormaterial layer). Any number of semiconductor material layers may be usedfor the epitaxial source/drain regions 98. In embodiments in which theepitaxial source/drain regions 98 include three semiconductor materiallayers, the liner layers 98A may be grown in the source/drain recesses96, the main layers 98B may be grown on the liner layers 98A, and thefinishing layers 98C may be grown on the main layers 98B. The linerlayers 98A, the main layers 98B, and the finishing layers 98C may beformed of different semiconductor materials and may be doped todifferent impurity concentrations. In some embodiments, the main layers98B have a greater concentration of impurities than the finishing layers98C, and the finishing layers 98C have a greater concentration ofimpurities than the liner layers 98A. Forming the liner layers 98A witha lesser concentration of impurities than the main layers 98B mayincrease adhesion in the source/drain recesses 96, and forming thefinishing layers 98C with a lesser concentration of impurities than themain layers 98B may reduce out-diffusion of dopants from the main layers98B during subsequent processing.

As a result of the epitaxy processes used to form the epitaxialsource/drain regions 98, upper surfaces of the epitaxial source/drainregions have facets which expand laterally outward beyond sidewalls ofthe semiconductor fins 54. In some embodiments, these facets causeadjacent epitaxial source/drain regions 98 to merge as illustrated byFIG. 11C. However, the hybrid fins 66 (where present) block the lateralepitaxial growth to prevent coalescing of some of the epitaxialsource/drain regions 98. For example, the hybrid fins 66 may be formedat cell boundaries to separate the epitaxial source/drain regions 98 ofadjacent cells. Therefore, some of the epitaxial source/drain regions 98are separated by the hybrid fins 66. The epitaxial source/drain regions98 may contact the sidewalls of the hybrid fins 66. In the illustratedembodiments, the fin spacers 94 are formed to cover a portion of thesidewalls of the semiconductor fins 54 that extend above the STI regions68, thereby blocking the epitaxial growth. In another embodiment, thespacer etch used to form the gate spacers 92 is adjusted to not form thefin spacers 94, so as to allow the epitaxial source/drain regions 98 toextend to the surfaces of the STI regions 68.

The fin spacer 94 may maintain their relative heights after the finspacers 94 are recessed (described for FIGS. 10A-10C) and the epitaxialsource/drain regions 98 are grown (described for FIGS. 11A-11C), suchthat the inner fin spacers 94N still have a greater height than theouter fin spacers 940. Accordingly, the outer fin spacers 940 over theSTI regions 68B (between the hybrid fins 66 and the semiconductor fins54) have a first height, the inner fin spacers 94N over the STI regions68A (between the semiconductor fins 54) have a second height, and thesecond height greater than the first height. In some embodiments, theinner fin spacers 94N and the outer fin spacers 940 have a height in therange of 5 nm to 50 nm.

In FIGS. 12A-12C, a first inter-layer dielectric (ILD) 104 is depositedover the epitaxial source/drain regions 98, the gate spacers 92, themasks 86 (if present) or the dummy gates 84, and the hybrid fins 66. Thefirst ILD 104 may be formed of a dielectric material, which may bedeposited by any suitable method, such as CVD, plasma-enhanced CVD(PECVD), FCVD, or the like. Acceptable dielectric materials may includephospho-silicate glass (PSG), boro-silicate glass (BSG), boron-dopedphospho-silicate glass (BPSG), undoped silicate glass (USG), or thelike. Other insulation materials formed by any acceptable process may beused.

In some embodiments, a contact etch stop layer (CESL) 102 is formedbetween the first ILD 104 and the epitaxial source/drain regions 98, thegate spacers 92, the masks 86 (if present) or the dummy gates 84, andthe hybrid fins 66. In some embodiments, the CESL 102 fills orsubstantially fills the seams 66A of the hybrid fins 66 adjacent thesource/drain regions 98 (see, e.g., FIG. 12C). The CESL 102 may beformed of a dielectric material, such as silicon nitride, silicon oxide,silicon oxynitride, or the like, having a high etching selectivity fromthe etching of the first ILD 104. The CESL 102 may be formed by anysuitable method, such as CVD, ALD, or the like.

In FIGS. 13A-13C, a removal process is performed to level the topsurfaces of the first ILD 104 with the top surfaces of the gate spacers92 and the masks 86 (if present) or the dummy gates 84. In someembodiments, a planarization process such as a chemical mechanicalpolish (CMP), an etch-back process, combinations thereof, or the likemay be utilized. The planarization process may also remove the masks 86on the dummy gates 84, and portions of the gate spacers 92 alongsidewalls of the masks 86. After the planarization process, the topsurfaces of the first ILD 104, the CESL 102, the gate spacers 92, andthe masks 86 (if present) or the dummy gates 84 are coplanar (withinprocess variations) such that they are level with each other.Accordingly, the top surfaces of the masks 86 (if present) or the dummygates 84 are exposed through the first ILD 104. In the illustratedembodiment, the masks 86 remain, and the planarization process levelsthe top surfaces of the first ILD 104 with the top surfaces of the masks86.

In FIGS. 14A-14C, the masks 86 (if present) and the dummy gates 84 anddummy dielectrics 82 are removed in an etching process, so that recesses106 are formed. The removal process removes the dummy dielectrics 82from the seams 66A of the hybrid fins 66 that were exposed with theremoval of the dummy gates 84. In some embodiments, the dummydielectrics 82 are removed from recesses 106 in a first region of a die(e.g., a core logic region) and remain in recesses 106 in a secondregion of the die (e.g., an input/output region). In some embodiments,the dummy gates 84 are removed by an anisotropic dry etch process. Forexample, the etching process may include a dry etch process usingreaction gas(es) that selectively etch the material of the dummy gates84 at a faster rate than the materials of the first ILD 104 and the gatespacers 92. During the removal, the dummy dielectrics 82 may be used asetch stop layers when the dummy gates 84 are etched. The dummydielectrics 82 may then be removed after the removal of the dummy gates84. In some embodiments, the dummy dielectrics 82 are removed by ananisotropic etch process. Each recess 106 exposes and/or overlies achannel region 58 of a respective semiconductor fin 54. The recesses 106also expose the hybrid fins 66 and the seams 66A of the hybrid fins 66.

In FIGS. 15A-16C, gate dielectrics 112 and gate electrodes 114 areformed for replacement gates. Each respective pair of a gate dielectric112 and a gate electrode 114 may be collectively referred to as a “gatestructure.” Each gate structure extends along sidewalls and a topsurface of a channel region 58 of the semiconductor fins 54. Some of thegate structures further extend along sidewalls and a top surface of ahybrid fin 66.

The gate dielectrics 112 include two or more gate dielectric layer(s)112A and 112B disposed in the recesses 106, such as on the top surfacesand the sidewalls of the semiconductor fins 54, on the top surfaces andthe sidewalls of the hybrid fins 66, and on sidewalls of the gatespacers 92. The gate dielectric layer 112A may be referred to as aninterfacial layer and may include an oxide such as silicon oxide or ametal oxide, a silicate such as a metal silicate, combinations thereof,multi-layers thereof, or the like. The gate dielectric layer 112A isformed to fill or substantially fill the seams 66A in the hybrid fins66. The gate dielectric layer 112A is formed in the seams 66A by firstsoaking the structure in a silicon precursor followed by an oxidationprocess. In some embodiments, the silicon precursor includes SiH₄,Si₂H₆, LTO520 (C₆H₁₇NSi), SAM24 (C₈H₂₂N₂Si), the like, or a combinationthereof. In some embodiments, the silicon precursor soaking process isperformed at a temperature in a range from 350° C. to 490° C., for atime period in a range from 10 minutes to 30 minutes, and at a ratio ofsilicon precursor to carrier gas in a range from 5:1 to 10:1 with thecarrier gas including N₂, H₂, or the like. Performing the siliconprecursor soak with process conditions in these ranges followed by anoxidation process provides a sufficiently thin film (e.g., less than 10Å), and the length, width, and height of the trench design betweensemiconductor fins 54 and hybrid fins 66 of the overall wafer structureis not affected.

In some embodiments, the oxidation process is an O₃ oxidation process.The gate dielectric layer 112A within the seams 66A of the hybrid fins66 may have a different material composition than the gate dielectriclayer 112A on the semiconductor fins 54. In some embodiments, the gatedielectric layer 112A within the seams 66A is more silicon-rich than thegate dielectric layer 112A outside of the seams 66A. For example, thegate dielectric layer 112A within the seams 66A of the hybrid fins 66may have a ratio of silicon to oxygen (Si:O) in a range from 1:1 to1:1.5 and the gate dielectric layer 112A on the semiconductor fins 54may have a Si:O ratio in a range from 1:1.5 to 1:2.

FIG. 19 illustrates a structure at a similar stage of processing as FIG.15A in accordance with some embodiments. The formation steps andprocesses of this structure are similar to those described in the otherembodiments and the descriptions are not repeated herein. In FIG. 19 ,the gate dielectric layer 112A is within the seams 66A and on thechannel regions 58 of the semiconductor fins 54. In some embodiments,the gate dielectric layer 112A is not formed on outer sidewall of thehybrid fins 66 as illustrated in FIG. 19 .

By filling the seams 66A of the hybrid fins 66 with the interfaciallayer 112A, conductive material from subsequently formed source/drainand/or gate contacts is prevented from forming in the seams 66A.Preventing the conductive material from source/drain and/or gatecontacts to form in the seams 66A prevents the source/drains and gatesfrom shorting to each other by way of the seams 66A. Manufacturing yieldof the devices may thus be improved. Also, by simultaneously forming theinterfacial layer(s) under the replacement gate structures and fillingthe seams 66A, extra processing is not needed to fill the seams of thehybrid fins.

After the gate dielectric layer 112A is formed, the gate dielectriclayer 112B is formed. The gate dielectric layer 112B may include ahigh-k dielectric material, such as a metal oxide or a silicate ofhafnium, aluminum, zirconium, lanthanum, manganese, barium, titanium,lead, and combinations thereof. The dielectric material(s) of the gatedielectric layer 112B may be formed by molecular-beam deposition (MBD),ALD, PECVD, or the like. The gate dielectric layer 112B is not formedwithin the seams 66A as the seams 66A were already filled by the gatedielectric layer 112A. In embodiments where portions of the dummydielectrics 82 remain in the recesses 106, the gate dielectric layers112 includes a material of the dummy dielectrics 82 (e.g., siliconoxide). Although a dual-layered gate dielectric layers 112 isillustrated, the gate dielectric layers 112 may include any number ofinterfacial layers and any number of main layers.

In FIGS. 16A-16C, the gate electrodes 114 including one or more gateelectrode layer(s) are disposed over the gate dielectrics 112, whichfill the remaining portions of the recesses 106. The gate electrodes 114may include a metal-containing material such as titanium nitride,titanium oxide, tantalum nitride, tantalum carbide, tungsten, cobalt,ruthenium, aluminum, combinations thereof, multi-layers thereof, or thelike. Although single-layered gate electrodes 114 are illustrated, thegate electrodes 114 may include any number of work function tuninglayers, any number of barrier layers, any number of glue layers, and afill material.

As an example to form the gate structures, one or more gate dielectriclayer(s) may be deposited in the recesses 106. The gate dielectriclayer(s) may also be deposited on the top surfaces of the first ILD 104,the CESL 102, and the gate spacers 92. Subsequently, one or more gateelectrode layer(s) may be deposited on the gate dielectric layer(s) 112.A removal process may then be performed to remove the excess portions ofthe gate dielectric layer(s) and the gate electrode layer(s), whichexcess portions are over the top surfaces of the first ILD 104, the CESL102, and the gate spacers 92. The gate dielectric layer(s), after theremoval process, have portions left in the recesses 106 (thus formingthe gate dielectrics 112). The gate electrode layer(s), after theremoval process, have portions left in the recesses 106 (thus formingthe gate electrodes 114). In some embodiments, a planarization processsuch as a chemical mechanical polish (CMP), an etch-back process,combinations thereof, or the like may be utilized. After theplanarization process, the top surfaces of the gate spacers 92, the CESL102, the first ILD 104, the gate dielectrics 112A and 112B, and the gateelectrodes 114 are coplanar (within process variations) such that theyare level with each other.

The formation of the gate dielectrics 112A and 112B in the n-type region50N and the p-type region 50P may occur simultaneously such that thegate dielectrics 112A and 112B in each region are formed of the samematerial(s), and the formation of the gate electrodes 114 may occursimultaneously such that the gate electrodes 114 in each region areformed of the same material(s). In some embodiments, the gatedielectrics 112A and 112B in each region may be formed by distinctprocesses, such that the gate dielectrics 112A and 112B may includedifferent materials and/or have a different number of layers, and/or thegate electrodes 114 in each region may be formed by distinct processes,such that the gate electrodes 114 may include different materials and/orhave a different number of layers. Various masking steps may be used tomask and expose appropriate regions when using distinct processes.

In FIGS. 17A-17C, a second ILD 124 is deposited over the gate spacers92, the CESL 102, the first ILD 104, the gate dielectrics 112A and 112B,and the gate electrodes 114. In some embodiments, the second ILD 124 isa flowable film formed by a flowable CVD method. In some embodiments,the second ILD 124 is formed of a dielectric material such as PSG, BSG,BPSG, USG, or the like, which may be deposited by any suitable method,such as CVD, PECVD, or the like.

Optionally, before the formation of the second ILD 124, gate masks 116are formed over the gate structures (including the gate dielectrics 112and the gate electrodes 114). As an example to form the gate masks 116,the gate structures and optionally the gate spacers 92 may be recessedusing any acceptable etching process. One or more dielectric material(s)may then be formed in the recesses and on the top surfaces of the CESL102 and the first ILD 104. Acceptable dielectric materials includesilicon nitride, silicon carbonitride, silicon oxynitride, siliconoxycarbonitride, or the like, which may be formed by a conformaldeposition process such as chemical vapor deposition (CVD),plasma-enhanced chemical vapor deposition (PECVD), atomic layerdeposition (ALD), plasma-enhanced atomic layer deposition (PEALD), orthe like. Other insulation materials formed by any acceptable processmay be used. A removal process is performed to remove the excessportions of the dielectric material(s), which excess portions are overthe top surfaces of the CESL 102 and the first ILD 104, thereby formingthe gate masks 116. The dielectric material(s), after the removalprocess, have portions left in the recesses (thus forming the gate masks116). In some embodiments, a planarization process such as a chemicalmechanical polish (CMP), an etch-back process, combinations thereof, orthe like may be utilized. After the planarization process, the topsurfaces of the CESL 102, the first ILD 104, and the gate masks 116 arecoplanar (within process variations) such that they are level with eachother. Gate contacts will be subsequently formed to penetrate throughthe gate masks 116 to contact the top surfaces of the gate electrodes114.

In some embodiments, an etch stop layer (ESL) 122 is formed between thesecond ILD 124 and the gate spacers 92, the CESL 102, the first ILD 104,and the gate masks 116 (if present) or the gate dielectrics 112A and112B and the gate electrodes 114. The ESL 122 may include a dielectricmaterial, such as, silicon nitride, silicon oxide, silicon oxynitride,or the like, having a high etching selectivity from the etching of thesecond ILD 124.

In FIGS. 18A-18C, gate contacts 132 and source/drain contacts 134 areformed to contact, respectively, the gate electrodes 114 and theepitaxial source/drain regions 98. The gate contacts 132 are physicallyand electrically coupled to the gate electrodes 114. The source/draincontacts 134 are physically and electrically coupled to the epitaxialsource/drain regions 98.

As an example to form the gate contacts 132 and the source/draincontacts 134, openings for the gate contacts 132 are formed through thesecond ILD 124, the ESL 122, and the gate masks 116, and openings forthe source/drain contacts 134 are formed through the second ILD 124, theESL 122, the first ILD 104, and the CESL 102. The openings may be formedusing acceptable photolithography and etching techniques. A liner (notseparately illustrated), such as a diffusion barrier layer, an adhesionlayer, or the like, and a conductive material are formed in theopenings. The liner may include titanium, titanium nitride, tantalum,tantalum nitride, or the like. The conductive material may be copper, acopper alloy, silver, gold, tungsten, cobalt, aluminum, nickel, or thelike. A planarization process, such as a CMP, may be performed to removeexcess material from a surface of the second ILD 124. The remainingliner and conductive material form the gate contacts 132 and thesource/drain contacts 134 in the openings. The gate contacts 132 and thesource/drain contacts 134 may be formed in distinct processes, or may beformed in the same process. Although shown as being formed in the samecross-sections, it should be appreciated that each of the gate contacts132 and the source/drain contacts 134 may be formed in differentcross-sections, which may avoid shorting of the contacts.

Optionally, metal-semiconductor alloy regions 136 are formed at theinterfaces between the epitaxial source/drain regions 98 and thesource/drain contacts 134. The metal-semiconductor alloy regions 136 canbe silicide regions formed of a metal silicide (e.g., titanium silicide,cobalt silicide, nickel silicide, etc.), germanide regions formed of ametal germanide (e.g. titanium germanide, cobalt germanide, nickelgermanide, etc.), silicon-germanide regions formed of both a metalsilicide and a metal germanide, or the like. The metal-semiconductoralloy regions 136 can be formed before the material(s) of thesource/drain contacts 134 by depositing a metal in the openings for thesource/drain contacts 134 and then performing a thermal anneal process.The metal can be any metal capable of reacting with the semiconductormaterials (e.g., silicon, silicon-germanium, germanium, etc.) of theepitaxial source/drain regions 98 to form a low-resistancemetal-semiconductor alloy, such as nickel, cobalt, titanium, tantalum,platinum, tungsten, other noble metals, other refractory metals, rareearth metals or their alloys. The metal can be deposited by a depositionprocess such as ALD, CVD, PVD, or the like. After the thermal annealprocess, a cleaning process, such as a wet clean, may be performed toremove any residual metal from the openings for the source/draincontacts 134, such as from surfaces of the metal-semiconductor alloyregions 136. The material(s) of the source/drain contacts 134 can thenbe formed on the metal-semiconductor alloy regions 136.

Embodiments may achieve advantages. Filling seams 66A of the hybrid fins66 with the interfacial layer 112A prevents conductive material fromsubsequently formed source/drain and/or gate contacts to form in theseams 66A. Preventing the conductive material from source/drain and/orgate contacts to form in the seams 66A prevents the source/drains andgates from shorting to each other by way of the seams 66A. Manufacturingyield of the devices may thus be improved. In some embodiments, theseams 66A are filled by a silicon precursor soaking process and anoxidation process. These processes simultaneously form the interfaciallayer(s) under the replacement gate structures such that extraprocessing is not needed to fill the seams of the hybrid fins.

The disclosed FinFET embodiments could also be applied to nanostructuredevices such as nanostructure (e.g., nanosheet, nanowire,gate-all-around, or the like) field-effect transistors (NSFETs). In anNSFET embodiment, the fins are replaced by nanostructures formed bypatterning a stack of alternating layers of channel layers andsacrificial layers. Dummy gate structures and source/drain regions areformed in a manner similar to the above-described embodiments. After thedummy gate structures are removed, the sacrificial layers can bepartially or fully removed in channel regions. The replacement gatestructures are formed in a manner similar to the above-describedembodiments, the replacement gate structures may partially or completelyfill openings left by removing the sacrificial layers, and thereplacement gate structures may partially or completely surround thechannel layers in the channel regions of the NSFET devices. ILDs andcontacts to the replacement gate structures and the source/drain regionsmay be formed in a manner similar to the above-described embodiments.

Further, the FinFET/NSFET devices may be interconnected by metallizationlayers in an overlying interconnect structure to form integratedcircuits. The overlying interconnect structure can be formed in a backend of line (BEOL) process, in which the metallization layers areconnected to the gate contacts 132 and the source/drain contacts 134.Additional features, such as passive devices, memories (e.g.,magnetoresistive random-access memory (MRAM), resistive random-accessmemory (RRAM), phase-change random access memory (PCRAM), etc.), or thelike may be integrated with the interconnect structure during the BEOLprocess.

An embodiment includes a device including a first semiconductor finextending from a substrate, a second semiconductor fin extending fromthe substrate, a hybrid fin over the substrate, the hybrid fin disposedbetween the first semiconductor fin and the second semiconductor fin,and the hybrid fin having an oxide inner portion extending downward froma top surface of the hybrid fin. The device also includes a firstisolation region between the second semiconductor fin, the firstsemiconductor fin, and the hybrid fin, the hybrid fin extending above atop surface of the first isolation region, a high-k gate dielectric oversidewalls of the hybrid fin, sidewalls of the first semiconductor fin,and sidewalls of the second semiconductor fin, a gate electrode on thehigh-k gate dielectric, and source/drain regions on the firstsemiconductor fin on opposing sides of the gate electrode.

Embodiments may include one or more of the following features. Thedevice where top surfaces of the hybrid fin, the first semiconductorfin, and the second semiconductor fin are level with each other. Thefirst semiconductor fin includes an interfacial oxide layer betweensidewalls of the first semiconductor fin and the high-k gate dielectric.The oxide inner portion of the hybrid fin is more silicon-rich than theinterfacial oxide layer. The hybrid fin includes silicon nitride,tantalum oxide, aluminum oxide, zirconium oxide, hafnium oxide, siliconcarbonitride, silicon oxycarbonitride, or a combination thereof. Thedevice further including a third semiconductor fin adjacent the secondsemiconductor fin, a second isolation region between the secondsemiconductor fin and the third semiconductor fin, a top surface of thefirst isolation region disposed further from the substrate than a topsurface of the second isolation region. A bottom surface of the firstisolation region disposed further from top surfaces of the hybrid fin,the first semiconductor fin, and the second semiconductor fin than abottom surface of the second isolation region.

An embodiment includes a method including forming a first semiconductorfin and a second semiconductor fin extending from a substrate, formingan insulation material around the first semiconductor fin and the secondsemiconductor fin, a first portion of the insulation material disposedbetween the first semiconductor fin and the second semiconductor fin.The method also includes forming a hybrid fin on the first portion ofthe insulation material, the hybrid fin having a seam therein. Themethod also includes recessing the first portion of the insulationmaterial to form a first isolation region. The method also includesforming a dummy gate structure over the first semiconductor fin, thehybrid fin, and the second semiconductor fin. The method also includesforming source/drain regions on the first semiconductor fin and thesecond semiconductor fin on opposing sides of the dummy gate structure.The method also includes removing the dummy gate structure to form agate trench. The method also includes forming a first gate dielectriclayer on the first semiconductor fin, the hybrid fin, and the secondsemiconductor fin in the gate trench, the first gate dielectric layerfilling the seam in the hybrid fin. The method also includes forming asecond gate dielectric layer on the first gate dielectric layer in thegate trench. The method also includes forming a gate electrode layer onthe second gate dielectric layer in the gate trench.

Embodiments may include one or more of the following features. Themethod where forming the hybrid fin includes depositing a dielectriclayer on the insulation material between the first semiconductor fin andthe second semiconductor fin unoccupied by the insulation material,removing a portion of the dielectric layer. Removing the portion of thedielectric layer includes planarizing the dielectric layer, theinsulation material, the first semiconductor fin, and the secondsemiconductor fin, where top surfaces of the hybrid fin, the firstsemiconductor fin, and the second semiconductor fin are level with eachother. Forming the first gate dielectric layer includes performing asilicon precursor soaking process in the gate trench, after performingthe silicon precursor soaking process, performing an oxidation processin the gate trench, where after the oxidation process, the first gatedielectric layer is formed in the gate trench and in the seam of thehybrid fin. The first gate dielectric layer includes silicon oxide, andwhere the second gate dielectric layer includes a high-k layer. Thefirst gate dielectric layer in the seam of the hybrid fin is moresilicon-rich than the first gate dielectric layer on the firstsemiconductor fin. The hybrid fin includes silicon nitride, tantalumoxide, aluminum oxide, zirconium oxide, hafnium oxide, siliconcarbonitride, silicon oxycarbonitride, or a combination thereof. Themethod further including forming an etch stop layer over thesource/drain regions and the hybrid fin, the etch stop layer filling aportion of the seam in the hybrid fin outside of the gate trench,forming interlayer dielectric over the etch stop layer. The methodfurther including forming conductive contacts through the interlayerdielectric and the etch stop layer to the source/drain regions, theconductive contacts being electrically connected to the source/drainregions.

An embodiment includes a method including forming a first semiconductorfin extending from a substrate. The method also includes forming aninsulation material around the first semiconductor fin. The method alsoincludes depositing a dielectric layer on the insulation material aroundthe first semiconductor fin. The method also includes removing a portionof the dielectric layer to form a dielectric fin, the dielectric finhaving a seam therein. The method also includes recessing the insulationmaterial, where after recessing the insulation material, the dielectricfin extends above a top surface of the insulation material. The methodalso includes forming a dummy gate structure over the firstsemiconductor fin, the dielectric fin, and the recessed insulationmaterial. The method also includes forming source/drain regions on thefirst semiconductor fin on opposing sides of the dummy gate structure.The method also includes removing the dummy gate structure to form agate trench. The method also includes performing a silicon precursorsoaking process in the gate trench. The method also includes afterperforming the silicon precursor soaking process, performing anoxidation process in the gate trench to form an interfacial layer on thefirst semiconductor fin and the dielectric fin in the gate trench, theinterfacial layer filling the seam in the dielectric fin. The methodalso includes forming a high-k gate dielectric layer on the interfaciallayer in the gate trench. The method also includes forming a gateelectrode layer on the high-k gate dielectric layer in the gate trench.

Embodiments may include one or more of the following features. Themethod where the interfacial layer in the seam of the dielectric fin ismore silicon-rich than the interfacial layer on the first semiconductorfin. The high-k gate dielectric layer is not in the seam of thedielectric fin. Removing the portion of the dielectric layer includesplanarizing the dielectric layer, the insulation material, and the firstsemiconductor fin, where top surfaces of the dielectric fin and thefirst semiconductor fin are level with each other.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A device comprising: a first semiconductor finextending from a substrate; a second semiconductor fin extending fromthe substrate; a hybrid fin over the substrate, the hybrid fin disposedbetween the first semiconductor fin and the second semiconductor fin,the hybrid fin having an oxide inner portion extending downward from atop surface of the hybrid fin; a first isolation region between thesecond semiconductor fin, the first semiconductor fin, and the hybridfin, the hybrid fin extending above a top surface of the first isolationregion; a high-k gate dielectric over sidewalls of the hybrid fin,sidewalls of the first semiconductor fin, and sidewalls of the secondsemiconductor fin; a gate electrode on the high-k gate dielectric; andsource/drain regions on the first semiconductor fin on opposing sides ofthe gate electrode.
 2. The device of claim 1, wherein top surfaces ofthe hybrid fin, the first semiconductor fin, and the secondsemiconductor fin are level with each other.
 3. The device of claim 1,wherein the first semiconductor fin includes an interfacial oxide layerbetween sidewalls of the first semiconductor fin and the high-k gatedielectric.
 4. The device of claim 3, wherein the oxide inner portion ofthe hybrid fin is more silicon-rich than the interfacial oxide layer. 5.The device claim 1, wherein the hybrid fin comprises silicon nitride,tantalum oxide, aluminum oxide, zirconium oxide, hafnium oxide, siliconcarbonitride, silicon oxycarbonitride, or a combination thereof.
 6. Thedevice of claim 1 further comprising: a third semiconductor fin adjacentthe second semiconductor fin; and a second isolation region between thesecond semiconductor fin and the third semiconductor fin, a top surfaceof the first isolation region disposed further from the substrate than atop surface of the second isolation region.
 7. The device of claim 6,wherein a bottom surface of the first isolation region disposed furtherfrom top surfaces of the hybrid fin, the first semiconductor fin, andthe second semiconductor fin than a bottom surface of the secondisolation region.
 8. A method comprising: forming a first semiconductorfin and a second semiconductor fin extending from a substrate; formingan insulation material around the first semiconductor fin and the secondsemiconductor fin, a first portion of the insulation material disposedbetween the first semiconductor fin and the second semiconductor fin;forming a hybrid fin on the first portion of the insulation material,the hybrid fin having a seam therein; recessing the first portion of theinsulation material to form a first isolation region; forming a dummygate structure over the first semiconductor fin, the hybrid fin, and thesecond semiconductor fin; forming source/drain regions on the firstsemiconductor fin and the second semiconductor fin on opposing sides ofthe dummy gate structure; removing the dummy gate structure to form agate trench; forming a first gate dielectric layer on the firstsemiconductor fin, the hybrid fin, and the second semiconductor fin inthe gate trench, the first gate dielectric layer filling the seam in thehybrid fin; forming a second gate dielectric layer on the first gatedielectric layer in the gate trench; and forming a gate electrode layeron the second gate dielectric layer in the gate trench.
 9. The method ofclaim 8, wherein forming the hybrid fin comprises: depositing adielectric layer on the insulation material between the firstsemiconductor fin and the second semiconductor fin unoccupied by theinsulation material; and removing a portion of the dielectric layer. 10.The method of claim 9, wherein removing the portion of the dielectriclayer comprises: planarizing the dielectric layer, the insulationmaterial, the first semiconductor fin, and the second semiconductor fin,wherein top surfaces of the hybrid fin, the first semiconductor fin, andthe second semiconductor fin are level with each other.
 11. The methodof claim 8, wherein forming the first gate dielectric layer comprises:performing a silicon precursor soaking process in the gate trench; andafter performing the silicon precursor soaking process, performing anoxidation process in the gate trench, wherein after the oxidationprocess, the first gate dielectric layer is formed in the gate trenchand in the seam of the hybrid fin.
 12. The method of claim 8, whereinthe first gate dielectric layer comprises silicon oxide, and wherein thesecond gate dielectric layer comprises a high-k layer.
 13. The method ofclaim 12, wherein the first gate dielectric layer in the seam of thehybrid fin is more silicon-rich than the first gate dielectric layer onthe first semiconductor fin.
 14. The method of claim 8, wherein thehybrid fin comprises silicon nitride, tantalum oxide, aluminum oxide,zirconium oxide, hafnium oxide, silicon carbonitride, siliconoxycarbonitride, or a combination thereof.
 15. The method of claim 8further comprising: forming an etch stop layer over the source/drainregions and the hybrid fin, the etch stop layer filling a portion of theseam in the hybrid fin outside of the gate trench; and forminginterlayer dielectric over the etch stop layer.
 16. The method of claim15 further comprising: forming conductive contacts through theinterlayer dielectric and the etch stop layer to the source/drainregions, the conductive contacts being electrically connected to thesource/drain regions.
 17. A method comprising: forming a firstsemiconductor fin extending from a substrate; forming an insulationmaterial around the first semiconductor fin; depositing a dielectriclayer on the insulation material around the first semiconductor fin; andremoving a portion of the dielectric layer to form a dielectric fin, thedielectric fin having a seam therein; recessing the insulation material,wherein after recessing the insulation material, the dielectric finextends above a top surface of the insulation material; forming a dummygate structure over the first semiconductor fin, the dielectric fin, andthe recessed insulation material; forming source/drain regions on thefirst semiconductor fin on opposing sides of the dummy gate structure;removing the dummy gate structure to form a gate trench; performing asilicon precursor soaking process in the gate trench; and afterperforming the silicon precursor soaking process, performing anoxidation process in the gate trench to form an interfacial layer on thefirst semiconductor fin and the dielectric fin in the gate trench, theinterfacial layer filling the seam in the dielectric fin; forming ahigh-k gate dielectric layer on the interfacial layer in the gatetrench; and forming a gate electrode layer on the high-k gate dielectriclayer in the gate trench.
 18. The method of claim 17, wherein theinterfacial layer in the seam of the dielectric fin is more silicon-richthan the interfacial layer on the first semiconductor fin.
 19. Themethod of claim 17, wherein the high-k gate dielectric layer is not inthe seam of the dielectric fin.
 20. The method of claim 17, whereinremoving the portion of the dielectric layer comprises: planarizing thedielectric layer, the insulation material, and the first semiconductorfin, wherein top surfaces of the dielectric fin and the firstsemiconductor fin are level with each other.